Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

Characterization of Dielectric Layers for Passivation of 4H-SiC Devices

Effect of High-K Dielectric Materials on Leakage Current

Abstract: In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schrödinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulat...

4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...

Impact of Dielectric Formation and Processing Techniques on the Operation of 4H-SiC MOSFETs

The mobility of carriers in the channel of silicon carbide is significantly lower than in equivalent silicon devices. This results in a significant increase in on-state resistance in comparison to theoretical predictions and is hindering the uptake of silicon carbide technology in commercial circuits. The density of interface traps at the interface be‐ tween silicon carbide and the dielectric f...